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Complete HD and HDRip 720p Urdu, Hindi, English, Tamil and Telugu Movies, Movie. Comedy, Malayalam, Telugu, Tamil.. Chaahat-Ek Nasha Urdu Hindi Movie Full Download in HD. Movie not streaming smoothly or Download film music from ZIMPLE.NET the latest full-length Hindi Movies in HD and SL. Kyaa Deewanaan. Battle Of The Doctors .The invention relates to memory systems and more particularly to an erasable and programmable read-only memory system that includes a large number of high density memory cells which can be programmed to store information. The invention further relates to a method of programming such a memory system.
Electrically erasable and programmable read-only memories (EEPROMs) are memories in which the contents of each memory cell can be erased in response to an erasure signal and stored electrical charge or can be stored in response to a programming signal. A memory cell is programmed or erased by respectively placing and removing charge from the floating gate of the transistor that forms the memory cell. Alternatively, the memory cell can be programmed or erased by placing or removing charge to the source or drain regions of the memory cell transistor.
In one type of electrically erasable and programmable memory cell, the memory cell comprises a transistor having a floating gate isolated between a control gate and the substrate on which the transistor is formed. The memory cell transistor is programmed to store charge on the floating gate by applying a positive voltage to the control gate, a negative voltage to the substrate and an erase signal to the source, so that electrons are removed from the floating gate by Fowler-Nordheim tunneling. The floating gate can be returned to the erased state by a positive voltage on the control gate and a negative voltage on the source. This type of non-volatile memory cell is known as a two-transistor cell, because it includes two transistors.
The memory cell can be programmed to store charge by applying a positive voltage to the control gate and to the drain, a negative voltage to the source and programming signals to the substrate, so that electrons are drawn from the source and injected into the floating gate by hot carrier injection. The floating gate can be erased by exposing the transistor to an ultraviolet or other form of radiation so as to remove the electrons from the floating gate and erase the memory cell.
Another type of electrically erasable and programmable memory cell is known as a four-transistor cell,
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